Design of a 1.2 kV SiC MOSFET with Buried Oxide for Improving Switching Characteristics is a high-quality image in the Bestof collection, available at 1902 × 1234 pixels resolution — ideal for both digital and print use.
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Image Details
| Title | Design of a 1.2 kV SiC MOSFET with Buried Oxide for Improving Switching Characteristics |
|---|---|
| Dimensions | 1902 × 1234 px |
| Category | Bestof |
| Published | November 4, 2025 |
| Author | Zeus |
| Downloads | 1,548 |
| Views | 58 |
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